5NBND. HGT1S5NBNDS. TOAB. 5NBND. NOTE: When ordering , use the entire part number. Add the suffix 9A to obtain the TOAB variant in. 5NBND Datasheet: 21A, V, NPT Series N-Channel IGBTs with Anti- Parallel Hyperfast Diodes, 5NBND PDF Download Fairchild Semiconductor, . mosfet 5Nbnd datasheet, cross reference, circuit and application notes in pdf format.

Author: Kaziran Fecage
Country: Antigua & Barbuda
Language: English (Spanish)
Genre: Medical
Published (Last): 24 June 2016
Pages: 494
PDF File Size: 15.63 Mb
ePub File Size: 5.69 Mb
ISBN: 218-7-93468-411-6
Downloads: 10773
Price: Free* [*Free Regsitration Required]
Uploader: Meztibar

A critical component is any component of a life 1. All tail losses are included in the calculation for EOFF ; i. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup.

When ordering, use the entire part number. Gate Protection – These devices do not have an internal monolithic Zener diode from gate to emitter.

The datasheet is printed for reference information only. The IGBT is ideal for many high voltage switching applications operating at moderate datasheer where low conduction losses are essential, such as: Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date.

This test method produces the true total Turn-Off Energy Loss. Gate Termination – The gates of these devices are essentially capacitors.

TOP Related Posts  ANNO 2070 ARTBOOK PDF

5NBND pdf Datasheet P1 Part Num IC-ON-LINE

Other definitions are possible. Other typical frequency vs collector current ICE plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.

Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM.

This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Fairchild Semiconductor reserves the 5h120bnd to make changes at any time without notice in order to improve design.

Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region.

With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. Circuits that leave the gate opencircuited or floating should be avoided.

5N120BND Datasheet

Tips of soldering irons should be grounded. Devices should never be inserted into or removed from circuits with power on.

AC dattasheet DC motor controls, power supplies and drivers for solenoids, relays and contactors. Life support devices or systems are devices or support device or datasneet whose failure to perform can systems which, a are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or b support or sustain life, or c whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness.


5NBND Datasheet, PDF – Datasheet Search Engine

Operating frequency information for a typical device Figure 3 is presented as a guide for estimating device performance for a specific application. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means – for example, with a metallic wristband.

Specifications may change in any manner without notice. IGBTs can be handled safely if the following basic precautions are taken: If gate protection is required an external Zener is recommended. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.

The dxtasheet of device switching and conduction losses must not exceed PD. Pulse width limited by maximum junction temperature.